Product Line Card
Wuxi Xinjieneng Co., Ltd. was established in 2013, and has three wholly-owned subsidiaries, namely Xinjieneng Hong Kong, Dianji Integration and Jin Lan Power Semiconductor, as well as Shenzhen Branch and Ningbo Branch. Since its establishment, the company has focused on R&D, design and sales of semiconductor chips and power devices such as MOSFET and IGBT. The products are of high quality and complete series, and are widely used in consumer electronics, automotive electronics, industrial electronics, new energy vehicles and charging piles, intelligent equipment manufacturing, rail transit, photovoltaic new energy, 5G and other fields; With the vigorous development of cloud computing, big data, smart grid, unmanned driving and other fields in the future, the company's products will play an important role in these emerging fields. The company's main business is R&D, design and sales of semiconductor chips and power devices such as MOSFET and IGBT. The products sold by the company can be divided into chips and packaged products according to whether they are packaged or not. The company is a professional vertical division of labor manufacturer. The chip is designed by the company and then delivered to the chip foundry company for OEM production. The packaged product is made by the company entrusting an external packaging and testing company to package and test the chip.
IGBT power integration module (PIM)
Based on advanced IGBT chip technology and high reliability packaging technology, Xinjieneng has launched a brand new series of IGBT power integration module (PIM) products. This series of products includes 650V, 750V, 1200V and 1700V series products, and is equipped with different series of IGBT chips to ensure the good working efficiency of the products; At the same time, it can provide IGBT power module products with various general package shapes and circuit topologies to meet different application requirements. PIM of new clean energy can be widely used in industrial frequency conversion, industrial inverter, new energy, automotive electronics and other fields.
Based on advanced IGBT chip technology and high reliability packaging technology, Xinjieneng has launched a brand new series of IGBT power integration module (PIM) products. This series of products includes 650V, 750V, 1200V and 1700V series products, and is equipped with different series of IGBT chips to ensure the good working efficiency of the products; At the same time, it can provide IGBT power module products with various general package shapes and circuit topologies to meet different application requirements. PIM of new clean energy can be widely used in industrial frequency conversion, industrial inverter, new energy, automotive electronics and other fields.
1200-1350V IGBT
The new clean energy 1200V to 1350V N-channel IGBT devices, such as B series and W series, are widely used in various fields. Package range of 1200-1350V series IGBT products includes TO-264, TO-3P, TO-247, etc.
The new clean energy 1200V to 1350V N-channel IGBT devices, such as B series and W series, are widely used in various fields. Package range of 1200-1350V series IGBT products includes TO-264, TO-3P, TO-247, etc.
600-650V IGBT
The 600V to 650V IGBT products of Xinneng have good short-circuit performance, which provides sufficient margin for dealing with emergencies in the field of motor drive. Widely used in uninterruptible power supply (UPS), solar inverter and all hard switches.
Package range of n-channel 600-650V series IGBT products includes TO-220, TO-263, TO-251, TO-252, TO-3P, TO-247, etc.
The 600V to 650V IGBT products of Xinneng have good short-circuit performance, which provides sufficient margin for dealing with emergencies in the field of motor drive. Widely used in uninterruptible power supply (UPS), solar inverter and all hard switches.
Package range of n-channel 600-650V series IGBT products includes TO-220, TO-263, TO-251, TO-252, TO-3P, TO-247, etc.
12-300V NP MOSFET
12V~100V Complementary(N, P-type complementary) MOSFET products provided by New Jieneng are integrated into a single package with P-type and N-type Trench power MOSFET products in the complementary configuration of high and low sides, which greatly optimizes the product package structure. This kind of product is widely used in DC-DC conversion, motor control and battery management system.
Complementary MOSFET package shapes include DFN2*2, DFN3.3*3.3, DFN5*6, SOP-8, SOT-23-6L, TO-252-4L, etc.
12V~100V Complementary(N, P-type complementary) MOSFET products provided by New Jieneng are integrated into a single package with P-type and N-type Trench power MOSFET products in the complementary configuration of high and low sides, which greatly optimizes the product package structure. This kind of product is widely used in DC-DC conversion, motor control and battery management system.
Complementary MOSFET package shapes include DFN2*2, DFN3.3*3.3, DFN5*6, SOP-8, SOT-23-6L, TO-252-4L, etc.
500-1050V N MOSFET
Jieneng provides N-channel SJ-III series power MOSFET products with breakdown voltage ranging from 500V to 800V V. With good on-resistance, extremely low gate charge, excellent switching speed and very competitive cost performance, it has become an ideal choice for switching power supply applications. It is widely used in home appliance driving, computer power supply, UPS, electric vehicle charging and other fields.
Package range of SJ-III MOSFET products of N-channel 500-800V series includes TO-220, TO-223, TO-263, TO-251, TO-252, TO-247, etc.
Jieneng provides N-channel SJ-III series power MOSFET products with breakdown voltage ranging from 500V to 800V V. With good on-resistance, extremely low gate charge, excellent switching speed and very competitive cost performance, it has become an ideal choice for switching power supply applications. It is widely used in home appliance driving, computer power supply, UPS, electric vehicle charging and other fields.
Package range of SJ-III MOSFET products of N-channel 500-800V series includes TO-220, TO-223, TO-263, TO-251, TO-252, TO-247, etc.
12-150V P MOSFET
The N-type 12V~200V and P-type 12V~150V Trench power MOSFET products provided by New Clean Energy are widely used in motor drive, battery management system, load switch, communication, consumer electronics and other fields. At the same time, customers can choose a variety of package shapes, including DFN1*1, DFN2*2, DFN3.3*3.3, DFN5*6, SOT-23, SOT-523, SOT-89, SOT-223, SOP-8, TO-251 and TO-252.
The N-type 12V~200V and P-type 12V~150V Trench power MOSFET products provided by New Clean Energy are widely used in motor drive, battery management system, load switch, communication, consumer electronics and other fields. At the same time, customers can choose a variety of package shapes, including DFN1*1, DFN2*2, DFN3.3*3.3, DFN5*6, SOT-23, SOT-523, SOT-89, SOT-223, SOP-8, TO-251 and TO-252.
12-300V N MOSFET
The N-type 12V~200V and P-type 12V~150V Trench power MOSFET products provided by New Clean Energy are widely used in motor drive, battery management system, load switch, communication, consumer electronics and other fields. At the same time, customers can choose a variety of package shapes, including DFN1*1, DFN2*2, DFN3.3*3.3, DFN5*6, SOT-23, SOT-523, SOT-89, SOT-223, SOP-8, TO-251 and TO-252.
The N-type 12V~200V and P-type 12V~150V Trench power MOSFET products provided by New Clean Energy are widely used in motor drive, battery management system, load switch, communication, consumer electronics and other fields. At the same time, customers can choose a variety of package shapes, including DFN1*1, DFN2*2, DFN3.3*3.3, DFN5*6, SOT-23, SOT-523, SOT-89, SOT-223, SOP-8, TO-251 and TO-252.
Auto MOSFET
The power devices of new clean energy vehicles, including N-type MOSFET, P-type MOSFET, dual-channel MOSFET and IGBT, have passed AEC-Q101 certification. The voltage coverage range is -150V to 1050V, and the voltage coverage range of vehicle gauge IGBT devices is 600V to 1200V v. The new clean energy vehicle gauge power devices have been widely used in automobiles, from electronic control unit to domain controller, from battery anti-reverse connection to battery management system, from cabin motor drive to main drive electronic control, and in various automobile parts. 30V to 120V N-channel power MOSFET products, with ultra-low on-resistance, excellent switching characteristics, combined with the high reliability brought by advanced car gauge packaging, provide rich choices for automotive electronic design engineers. Widely used in vehicle body domain control, power battery management, DC/DC, powertrain, driver assistance, vehicle lighting and other systems.
The power devices of new clean energy vehicles, including N-type MOSFET, P-type MOSFET, dual-channel MOSFET and IGBT, have passed AEC-Q101 certification. The voltage coverage range is -150V to 1050V, and the voltage coverage range of vehicle gauge IGBT devices is 600V to 1200V v. The new clean energy vehicle gauge power devices have been widely used in automobiles, from electronic control unit to domain controller, from battery anti-reverse connection to battery management system, from cabin motor drive to main drive electronic control, and in various automobile parts. 30V to 120V N-channel power MOSFET products, with ultra-low on-resistance, excellent switching characteristics, combined with the high reliability brought by advanced car gauge packaging, provide rich choices for automotive electronic design engineers. Widely used in vehicle body domain control, power battery management, DC/DC, powertrain, driver assistance, vehicle lighting and other systems.
Address：15C, 15/F, Sanhang Technology Building, Northwestern Polytechnical University, No.45 Gaoxin Nanjiu Road, Nanshan District, Shenzhen, China
Phone：0755-8612 8820
